Abstract: We propose and study numerically a new deep ridge InGaAlAs/InP multi-quantum well (MQW) transistor lasers (TL), in which an n-doped InAlAs layer is inserted below the MQW layer in the device ...

Abstract: An ON-chip vacuum transistor based on electron emission from SiOx tunneling diodes formed at the side surface of a thin SiO2 film is proposed, where electrons transport in the vacuum channel ...

An SCR topology transmogrifies into BJT two-wire precision current source with a self-resetting fault-current limiter.

The bipolar transistor line covers a wide operating voltage range, enabling compatibility with 12V, 24V, and 48V automotive platforms. Diodes Incorporated expanded its automotive-qualified bipolar ...

Diodes has expanded its series of automotive-compliant bipolar transistors with 12 NPN and PNP devices designed to achieve ultra-low V CE(sat). With a saturation voltage of just 17 mV at 1 A and ...

Scientists argue that quantum technology is entering a transformative era, offering early glimpses of practical systems while exposing the engineering hurdles that must be overcome before the field ...