Theodoros Serghiou of the University of Glasgow’s James Watt School of Engineering led the development of the EGOFET. He said ...

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The Japanese AIST Group (consisting of National Institute of Advanced Industrial Science and Technology and AIST Solutions) ...

Displacing GaAs PAs is a long-term goal for Finwave, which has made progress on many fronts since Lesaicherre took charge in ...

APC-E’s initial product launch includes 650V SiC Schottky barrier diodes (SBDs) with low forward voltage to enhance energy savings in power supplies across a wide range of applications. Also included ...

Scientists from the French research organisation CEA-Leti presented three papers at Photonics West 2025 detailing the ...

Nimy Resources, a mining company, has entered into a collaboration with mineral supply chains firm M2i Global to secure a ...

Lumentum has announced that Michael Hurlston has been appointed president and CEO and as a director of the company, effective ...

To improve the durability of tin perovskite, a method called Ruddlesden-Popper (RP) has been proposed that introduces large ...

Navitas Semiconductor,. which makes the GaNFast GaN and GeneSiC SiC power semiconductors, has announced that both ...

Tunable lasing at around 405 nm is realised with an InGaN device featuring a narrow-ridge active channel and a periodically ...

During Q4 2024, KnowMade's SiC Patent Monitor showed 900 new patent families and 400 newly granted patents. This period also ...