During their keynote at FMS, Toshiba also announced that they’ll be producing the world’s first 8-stack and 16-stack TSV (Through-Silicon-Via) NAND packages. Thanks to TSV NAND stacking, Toshiba is ...
LONDON — Toshiba Corp., claims to have developed a novel high-k dielectric gate stack with high carrier mobility that can be applied to metal-insulator-semiconductor field-effect transistors (MISFETs) ...
Toshiba has announced a significant advance in the development of a gate stack and interlayer with high carrier mobility that can be applied to advanced metal-insulator-semiconductor field-effect ...
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