Editor's note: Linear Integrated Systems co-founder, John H. Hall, is an industry veteran who is still hands on when it comes to innovations like the latest JFET, LSK489. Anyone using an electronic ...
The basic equations describing transistor behavior rely on parameters like channel doping, the capacitance of the gate oxide, and the resistance between the source and drain and the channel. And for ...
V (BR)DSS (sometimes called BVDSS) is the drain-source voltage at which no more than the specified drain current will flow at the specified temperature and with zero gate-source voltage. This tracks ...
Power demands of computing and telecom applications are driving rapid developments in semiconductor components for power conversion. By looking at next-generation microprocessor requirements — a ...
The following figures are datasheet plots of the Vishay SiE848DF that is an N-channel, 30-V trench power MOSFET housed in a PolarPAK package. The MOSFET is package-limited at 60 A and 25° C. What is ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results